JANHCA2N6764
vs
UFN151
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROSEMI CORP
|
| Package Description |
DIE-3
|
,
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
150 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE
|
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
38 A
|
|
| Drain-source On Resistance-Max |
0.055 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
S-XUUC-N3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
SQUARE
|
|
| Package Style |
UNCASED CHIP
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Pulsed Drain Current-Max (IDM) |
152 A
|
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500/543G
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
UPPER
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
1
|
|
|
|
Compare JANHCA2N6764 with alternatives