JAN2N2906A vs BC556BDWP feature comparison

JAN2N2906A Silicon Transistor Corporation

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BC556BDWP Zetex / Diodes Inc

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SILICON TRANSISTOR CORP ZETEX PLC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.6 A
Collector-Emitter Voltage-Max 60 V 65 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 200
JEDEC-95 Code TO-18
JESD-30 Code O-MBCY-W3 S-XUUC-N2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 175 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND SQUARE
Package Style CYLINDRICAL UNCASED CHIP
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WIRE NO LEAD
Terminal Position BOTTOM UPPER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 250 MHz
Base Number Matches 11 2
Package Description UNCASED CHIP, S-XUUC-N2
Collector-Base Capacitance-Max 4.5 pF
VCEsat-Max 0.3 V

Compare JAN2N2906A with alternatives

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