JAN2N2906A
vs
JANS2N2906AL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
VPT COMPONENTS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.6 A
0.6 A
Collector-Emitter Voltage-Max
60 V
60 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
40
40
JEDEC-95 Code
TO-18
TO-206AA
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
175 °C
200 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.4 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
Base Number Matches
11
6
Case Connection
COLLECTOR
Collector-Base Capacitance-Max
8 pF
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
0.5 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
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