JAN2N2906A
vs
2N2907ABS-1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.6 A
0.6 A
Collector-Emitter Voltage-Max
60 V
60 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
40
100
JEDEC-95 Code
TO-18
JESD-30 Code
O-MBCY-W3
S-XUUC-N2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
2
Operating Temperature-Max
175 °C
200 °C
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
SQUARE
Package Style
CYLINDRICAL
UNCASED CHIP
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.4 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
Surface Mount
NO
YES
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
NO LEAD
Terminal Position
BOTTOM
UPPER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
Base Number Matches
11
1
Pbfree Code
Package Description
UNCASED CHIP, S-XUUC-N2
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
300 ns
Turn-on Time-Max (ton)
45 ns
Compare JAN2N2906A with alternatives
Compare 2N2907ABS-1 with alternatives