JAN1N991B vs 1N991AE3TR feature comparison

JAN1N991B Microsemi Corporation

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1N991AE3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-35 DO-7
Package Description O-LALF-W2 O-LALF-W2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-204AH DO-204AA
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.48 W 0.417 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/117
Reference Voltage-Nom 180 V 180 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 10%
Working Test Current 0.68 mA 0.68 mA
Base Number Matches 3 6
Pbfree Code Yes
Dynamic Impedance-Max 2200 Ω
Operating Temperature-Max 175 °C

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