1N991AE3TR vs JANTXV1N991B feature comparison

1N991AE3TR Microsemi Corporation

Buy Now Datasheet

JANTXV1N991B Motorola Mobility LLC

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MOTOROLA INC
Part Package Code DO-7
Package Description O-LALF-W2 O-LALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 2200 Ω
JEDEC-95 Code DO-204AA DO-204AA
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.417 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 180 V 180 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 10% 5%
Working Test Current 0.68 mA 0.68 mA
Base Number Matches 1 6
Knee Impedance-Max 7100 Ω
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

Compare 1N991AE3TR with alternatives

Compare JANTXV1N991B with alternatives