JAN1N6476US
vs
JANTXV1N6476US
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SEMTECH CORP
MICROCHIP TECHNOLOGY INC
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
GLASS PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
54 V
54 V
Breakdown Voltage-Nom
54 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
78.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-N2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500/552C
MIL-19500/552C
Rep Pk Reverse Voltage-Max
51.6 V
51.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
NO LEAD
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
1
Rohs Code
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JAN1N6476US with alternatives
Compare JANTXV1N6476US with alternatives