JAN1N6462
vs
P6SMBJ75CA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
DIOTEC SEMICONDUCTOR AG
Reach Compliance Code
unknown
not_compliant
Breakdown Voltage-Nom
6.5 V
Case Connection
ISOLATED
Clamping Voltage-Max
11 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/551C
Rep Pk Reverse Voltage-Max
6 V
75 V
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Matte Tin (Sn) - annealed
Terminal Form
WIRE
C BEND
Terminal Position
AXIAL
DUAL
Base Number Matches
2
3
Part Package Code
DO-214AA
Package Description
SMB, 2 PIN
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
92.5 V
Breakdown Voltage-Min
83.3 V
JEDEC-95 Code
DO-214AA
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-50 °C
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
5
Compare JAN1N6462 with alternatives
Compare P6SMBJ75CA with alternatives