JAN1N6352
vs
1N5276BTRE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Package Description |
DO-35, 2 PIN
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
28 Weeks
|
|
| Additional Feature |
LOW NOISE, HIGH SURGE CAPABILITY
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-41
|
|
| JESD-30 Code |
O-LALF-W2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500
|
|
| Reference Voltage-Nom |
150 V
|
150 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
0.85 mA
|
0.85 mA
|
| Base Number Matches |
4
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Dynamic Impedance-Max |
|
1500 Ω
|
|
|
|
Compare JAN1N6352 with alternatives
Compare 1N5276BTRE3 with alternatives