JAN1N6167
vs
JANS1N6167
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
LOW IMPEDANCE
|
METALLURGICALLY BONDED
|
| Breakdown Voltage-Min |
99.275 V
|
99.28 V
|
| Breakdown Voltage-Nom |
110 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
158.865 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
7.5 W
|
5 W
|
| Qualification Status |
Qualified
|
Qualified
|
| Reference Standard |
MIL-19500/516
|
MIL-19500/516
|
| Rep Pk Reverse Voltage-Max |
83.6 V
|
86.6 V
|
| Reverse Current-Max |
5 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
4
|
4
|
| JESD-609 Code |
|
e0
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JAN1N6167 with alternatives
Compare JANS1N6167 with alternatives