JAN1N6154A
vs
1N6154A.TR
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SEMTECH CORP
Reach Compliance Code
compliant
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
31.4 V
31.4 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
25.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
1
Pbfree Code
No
ECCN Code
EAR99
HTS Code
8541.10.00.50
Compare JAN1N6154A with alternatives
Compare 1N6154A.TR with alternatives