JAN1N6154A
vs
1N6154A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROSS COMPONENTS
STMICROELECTRONICS
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
GLASS, CB-432, 2 PIN
Reach Compliance Code
unknown
not_compliant
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
31.4 V
21.4 V
Breakdown Voltage-Nom
33 V
33 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
45.7 V
45.7 V
Configuration
COMMON CATHODE, 2 ELEMENTS
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
E-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
2
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
25.1 V
25.1 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
12
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
34.6 V
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JAN1N6154A with alternatives
Compare 1N6154A with alternatives