JAN1N6131A
vs
JANTXV1N6131
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROSS COMPONENTS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
104.5 V
99 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
151.3 V
158.865 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
GLASS
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500/516
Rep Pk Reverse Voltage-Max
83.6 V
83.6 V
Reverse Current-Max
1 µA
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
4
Package Description
HERMETIC SEALED PACKAGE-2
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Nom
110 V
Power Dissipation-Max
1.5 W
Compare JAN1N6131A with alternatives
Compare JANTXV1N6131 with alternatives