JAN1N6120A
vs
JANS1N6169
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
BKC SEMICONDUCTORS INC
SEMTECH CORP
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
35.1 V
117 V
Breakdown Voltage-Nom
39 V
130 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
56.2 V
187 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-XALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
7.5 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/516
MIL-19500/516
Rep Pk Reverse Voltage-Max
29.7 V
98.8 V
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
ZENER
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
5
Package Description
HERMETIC SEALED PACKAGE-2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
METALLURGICALLY BONDED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare JAN1N6120A with alternatives
Compare JANS1N6169 with alternatives