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JANS1N6169 vs 1N6169 feature comparison

JANS1N6169 Defense Logistics Agency

Buy Now Datasheet

1N6169 Microchip Technology Inc

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Additional Feature METALLURGICALLY BONDED HIGH RELIABILITY
Breakdown Voltage-Min 117.33 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 98.8 V 98.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 5 11
Rohs Code No
Factory Lead Time 21 Weeks
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Diodes » Transient Suppressors
Diodes » Transient Suppressors

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Compare 1N6169 with alternatives