JAN1N6120A
vs
BZW04-342BR0
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
TAIWAN SEMICONDUCTOR CO LTD
|
Reach Compliance Code |
compliant
|
compliant
|
Factory Lead Time |
25 Weeks
|
|
Breakdown Voltage-Min |
35.1 V
|
380 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
JESD-609 Code |
e0
|
e3
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
400 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
1 W
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500/516
|
|
Rep Pk Reverse Voltage-Max |
29.7 V
|
342 V
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Finish |
TIN LEAD
|
MATTE TIN
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
2
|
Package Description |
|
DO-41, 2 PIN
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.50
|
Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
|
Breakdown Voltage-Max |
|
420 V
|
Breakdown Voltage-Nom |
|
400 V
|
Clamping Voltage-Max |
|
548 V
|
JEDEC-95 Code |
|
DO-204AL
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare JAN1N6120A with alternatives
Compare BZW04-342BR0 with alternatives