JAN1N6120A vs BZW04-342BR0 feature comparison

JAN1N6120A Microchip Technology Inc

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BZW04-342BR0 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
Factory Lead Time 25 Weeks
Breakdown Voltage-Min 35.1 V 380 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1 W
Qualification Status Qualified
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 29.7 V 342 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Package Description DO-41, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 420 V
Breakdown Voltage-Nom 400 V
Clamping Voltage-Max 548 V
JEDEC-95 Code DO-204AL
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C

Compare JAN1N6120A with alternatives

Compare BZW04-342BR0 with alternatives