JAN1N6116A
vs
JANTX1N6112A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROSS COMPONENTS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
25.7 V
16.2 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
37.4 V
25.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
1.5 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/516
MIL-19500/516
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
2
Package Description
HERMETIC SEALED PACKAGE-2
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Nom
18 V
Rep Pk Reverse Voltage-Max
13.7 V
Compare JAN1N6116A with alternatives
Compare JANTX1N6112A with alternatives