JANTX1N6112A
vs
1N6146
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Transferred
Ihs Manufacturer
SEMICOA CORP
BKC SEMICONDUCTORS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
17.1 V
12.825 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
12
Rohs Code
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Nom
15 V
Clamping Voltage-Max
22.995 V
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Rep Pk Reverse Voltage-Max
11.4 V
Reverse Current-Max
20 µA
Terminal Finish
Tin/Lead (Sn/Pb)