JAN1N6111A
vs
JANTX1N6111A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -55C to +175C
Candidate List Date
2018-01-15
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.22
Qualifications
DLA
Breakdown Voltage-Min
15.2 V
14.4 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
22.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Qualified
Qualified
Reference Standard
MIL-19500
MIL-19500/516
Rep Pk Reverse Voltage-Max
12.2 V
12.2 V
Reverse Current-Max
20 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
4
Rohs Code
No
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Factory Lead Time
25 Weeks
Additional Feature
HIGH RELIABILITY
JESD-609 Code
e0
Power Dissipation-Max
3 W
Terminal Finish
TIN LEAD
Compare JAN1N6111A with alternatives
Compare JANTX1N6111A with alternatives