JAN1N6111A
vs
SA13CAHE3/54
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
14.4 V
14.4 V
Breakdown Voltage-Nom
16 V
15.15 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
23.4 V
23.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
12.2 V
13 V
Reverse Current-Max
20 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
2
Pbfree Code
Yes
Part Package Code
DO-15
Package Description
O-PALF-W2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max
15.9 V
JEDEC-95 Code
DO-204AC
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Compare JAN1N6111A with alternatives
Compare SA13CAHE3/54 with alternatives