JAN1N6060A
vs
JANTX1N6060A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
78.8 V
78.8 V
Breakdown Voltage-Min
71.3 V
71.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/500
MIL-19500
Rep Pk Reverse Voltage-Max
64 V
64 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
7
Rohs Code
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Case Connection
ISOLATED
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Terminal Finish
TIN LEAD
Compare JAN1N6060A with alternatives
Compare JANTX1N6060A with alternatives