JANTX1N6060A vs 1N6060AE3 feature comparison

JANTX1N6060A Microchip Technology Inc

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1N6060AE3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code compliant compliant
Breakdown Voltage-Max 78.8 V 78.8 V
Breakdown Voltage-Min 71.3 V 71.3 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA DO-202AA
JESD-30 Code O-MALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 64 V 64 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 75 V
Clamping Voltage-Max 103 V

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