JAN1N6052A vs JANTXV1N6052A feature comparison

JAN1N6052A Semicon Components Inc

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JANTXV1N6052A New England Semiconductor

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 37.8 V 37.8 V
Breakdown Voltage-Min 34.2 V 34.2 V
Breakdown Voltage-Nom 36 V
Case Connection CATHODE ISOLATED
Clamping Voltage-Max 49.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/507 MIL-19500/500
Rep Pk Reverse Voltage-Max 30 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 8 7
JEDEC-95 Code DO-13

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