JAN1N6052A
vs
1N6052AE3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
GENERAL SEMICONDUCTOR INC
|
MICROSEMI CORP
|
| Part Package Code |
DO-13
|
|
| Package Description |
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
CAPACITANCE IS CAPTURED FROM THE GRAPH
|
|
| Breakdown Voltage-Max |
37.8 V
|
37.8 V
|
| Breakdown Voltage-Min |
34.2 V
|
34.2 V
|
| Case Connection |
CATHODE
|
ISOLATED
|
| Clamping Voltage-Max |
49.9 V
|
49.9 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Min |
10000 pF
|
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-MALF-W2
|
O-MALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500/507
|
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Reverse Current-Max |
5 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
8
|
2
|
| Rohs Code |
|
Yes
|
| Breakdown Voltage-Nom |
|
36 V
|
| JEDEC-95 Code |
|
DO-202AA
|
|
|
|
Compare JAN1N6052A with alternatives
Compare 1N6052AE3 with alternatives