JAN1N5655A vs JANTX1N5655A feature comparison

JAN1N5655A Microchip Technology Inc

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JANTX1N5655A Semicon Components Inc

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Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SEMICON COMPONENTS INC
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code compliant unknown
Factory Lead Time 21 Weeks
Breakdown Voltage-Max 86.1 V 86.1 V
Breakdown Voltage-Min 77.9 V 77.9 V
Breakdown Voltage-Nom 82 V 82 V
Case Connection CATHODE ISOLATED
Clamping Voltage-Max 113 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA
JESD-30 Code O-MALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500/500
Rep Pk Reverse Voltage-Max 70.1 V 70 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 7
ECCN Code EAR99
HTS Code 8541.10.00.50
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

Compare JAN1N5655A with alternatives

Compare JANTX1N5655A with alternatives