JAN1N5655A
vs
1N5655AE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
NEW ENGLAND SEMICONDUCTOR
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Max
86.1 V
86.1 V
Breakdown Voltage-Min
77.9 V
77.9 V
Case Connection
ISOLATED
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-202AA
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/500
Rep Pk Reverse Voltage-Max
70.1 V
70.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
2
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
ECCN Code
EAR99
HTS Code
8541.10.00.50
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
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