JAN1N5649A
vs
P6KE51
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Factory Lead Time |
24 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Min |
44.7 V
|
45.9 V
|
| Case Connection |
CATHODE
|
ISOLATED
|
| Clamping Voltage-Max |
64.8 V
|
73.5 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-13
|
DO-204AC
|
| JESD-30 Code |
O-XALF-W2
|
O-PALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
IEC-61249-2-21; UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
40.2 V
|
41.3 V
|
| Reverse Current-Max |
5 µA
|
1 µA
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
56
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| Breakdown Voltage-Max |
|
56.1 V
|
| Breakdown Voltage-Nom |
|
51 V
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max |
|
5 W
|
| Reverse Test Voltage |
|
41.3 V
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare JAN1N5649A with alternatives
Compare P6KE51 with alternatives