JAN1N5649A
vs
1N5648A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICON TRANSISTOR CORP
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
49.4 V
Breakdown Voltage-Min
44.7 V
Case Connection
ISOLATED
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-13
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/500
Rep Pk Reverse Voltage-Max
40.2 V
36.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
15
Rohs Code
Package Description
HERMETIC SEALED, GLASS TO METAL, DO-13, 2 PIN
Breakdown Voltage-Nom
43 V
Clamping Voltage-Max
59.3 V
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
Terminal Finish
Tin/Lead (Sn/Pb)
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