JAN1N5649A
vs
P6KE51A
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
DIOTEC SEMICONDUCTOR AG
|
| Package Description |
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
DO-15, 2 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
21 Weeks
|
|
| Breakdown Voltage-Max |
49.4 V
|
53.6 V
|
| Breakdown Voltage-Min |
44.7 V
|
48.5 V
|
| Breakdown Voltage-Nom |
47.05 V
|
51 V
|
| Case Connection |
CATHODE
|
ISOLATED
|
| Clamping Voltage-Max |
64.8 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-202AA
|
DO-204AC
|
| JESD-30 Code |
O-MALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-50 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
5 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
40.2 V
|
43.6 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
DO-15
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Samacsys Manufacturer |
|
Diotec
|
| Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare JAN1N5649A with alternatives
Compare P6KE51A with alternatives