JAN1N5558
vs
1N5558
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
SILICON TRANSISTOR CORP
Package Description
DO-13, 2 PIN
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
191 V
191 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-13
JESD-30 Code
O-XALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/500D
Rep Pk Reverse Voltage-Max
175 V
175 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
14
ECCN Code
EAR99
HTS Code
8541.10.00.50
Compare JAN1N5558 with alternatives
Compare 1N5558 with alternatives