1N5558 vs JANTX1N5558 feature comparison

1N5558 Advanced Semiconductor Inc

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JANTX1N5558 Defense Logistics Agency

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Part Life Cycle Code Active Active
Ihs Manufacturer ASI SEMICONDUCTOR INC DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 191 V 191 V
Breakdown Voltage-Nom 191 V
Case Connection CATHODE ISOLATED
Clamping Voltage-Max 265 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-13
JESD-30 Code O-MALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 175 V 175 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 14 8
Package Description DO-13, 2 PIN
Power Dissipation-Max 1 W
Reference Standard MIL-19500/500D

Compare 1N5558 with alternatives

Compare JANTX1N5558 with alternatives