JAN1N5557
vs
1.5KE47HB0G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
PROTEK DEVICES
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
54 V
42.3 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
78.5 V
67.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/434
AEC-Q101; UL RECOGNIZED
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Rohs Code
Package Description
O-PALF-W2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
51.7 V
Breakdown Voltage-Nom
47 V
JEDEC-95 Code
DO-201
JESD-609 Code
e3
Rep Pk Reverse Voltage-Max
38.1 V
Terminal Finish
MATTE TIN
Compare JAN1N5557 with alternatives
Compare 1.5KE47HB0G with alternatives