JAN1N5524B-1 vs 1N5524BE3 feature comparison

JAN1N5524B-1 Cobham Semiconductor Solutions

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1N5524BE3 Microsemi Corporation

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer AEROFLEX/METELICS INC MICROSEMI CORP
Part Package Code DO-35 DO-35
Package Description HERMETIC SEALED PACKAGE-2 O-XALF-W2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature METALLURGICALLY BONDED METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-PALF-W2 O-XALF-W2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Standard MIL-19500/437 MIL-19500/437E
Reference Voltage-Nom 5.6 V 5.6 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 0.003 mA 3 mA
Base Number Matches 8 1
Rohs Code Yes
Dynamic Impedance-Max 30 Ω

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