IXTH36P10
vs
IRF5210SPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
LITTELFUSE INC
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
Infineon
JESD-609 Code
e3
e3
Peak Reflow Temperature (Cel)
260
260
Terminal Finish
Matte Tin (Sn)
MATTE TIN OVER NICKEL
Time@Peak Reflow Temperature-Max (s)
10
30
Base Number Matches
2
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
120 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
38 A
Drain-source On Resistance-Max
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
170 W
Pulsed Drain Current-Max (IDM)
140 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare IXTH36P10 with alternatives
Compare IRF5210SPBF with alternatives