Part Details for IRF5210SPBF by Infineon Technologies AG
Overview of IRF5210SPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRF5210SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF5210SPBF-ND
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DigiKey | MOSFET P-CH 100V 38A D2PAK Lead time: 52 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IRF5210S - MOSFET P-Channel Single RoHS: Compliant Status: Obsolete Min Qty: 1 | Call for Availability |
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$2.7600 / $3.2500 | Buy Now |
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DISTI #
SMC-IRF5210SPBF
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Sensible Micro Corporation | Transistor,Irf5210S,P-Ch Mosfet,D2Pak RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 05+ Container: Tubes | 50 |
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$0.8100 / $0.8775 | RFQ |
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DISTI #
SMC-IRF5210SPBF
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Sensible Micro Corporation | Hexfet Power Mosfet | Mosfet P-Ch 100V 38A D2Pak RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days | 0 |
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$0.8100 / $0.8775 | RFQ |
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Chip-Germany GmbH | RoHS: Not Compliant Container: SINGLE | 1 |
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RFQ | |
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Win Source Electronics | HEXFET Power MOSFET | MOSFET P-CH 100V 38A D2PAK | 58284 |
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$0.4715 / $0.6089 | Buy Now |
Part Details for IRF5210SPBF
IRF5210SPBF CAD Models
IRF5210SPBF Part Data Attributes
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IRF5210SPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF5210SPBF
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5210SPBF
This table gives cross-reference parts and alternative options found for IRF5210SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF5210STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRRPBF |
| AUIRF5210STRR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210SPBF vs AUIRF5210STRR |
| IRF5210S | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210S |
| AUIRF5210STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210SPBF vs AUIRF5210STRR |
| IRF5210STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRLPBF |
| IRF5210STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210STRR |
| IRF5210SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210SPBF |