IXGA20N120
vs
APT30GT60BRD
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
LITTELFUSE INC
|
ADVANCED POWER TECHNOLOGY INC
|
| Package Description |
,
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
LITTELFUSE
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
40 A
|
55 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
600 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
700 ns
|
95 ns
|
| Gate-Emitter Thr Voltage-Max |
5 V
|
5 V
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JEDEC-95 Code |
TO-263AB
|
TO-247
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
260 W
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Matte Tin (Sn)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
1500 ns
|
|
| Turn-off Time-Nom (toff) |
780 ns
|
340 ns
|
| Turn-on Time-Nom (ton) |
48 ns
|
45 ns
|
| VCEsat-Max |
2.5 V
|
|
| Base Number Matches |
5
|
3
|
| Rohs Code |
|
No
|
| Additional Feature |
|
ULTRA FAST SWITCHING
|
| Qualification Status |
|
Not Qualified
|
| Rise Time-Max (tr) |
|
40 ns
|
|
|
|
Compare IXGA20N120 with alternatives
Compare APT30GT60BRD with alternatives