IXFT22N60P
vs
SHD239607
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
LITTELFUSE INC
|
SENSITRON SEMICONDUCTOR
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
CHIP CARRIER, R-XBCC-N3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
1000 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
22 A
|
20 A
|
Drain-source On Resistance-Max |
0.33 Ω
|
0.35 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
38 pF
|
|
JEDEC-95 Code |
TO-268AA
|
|
JESD-30 Code |
R-PSSO-G2
|
R-XBCC-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
400 W
|
|
Pulsed Drain Current-Max (IDM) |
66 A
|
80 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
PURE TIN
|
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
No
|
Pin Count |
|
3
|
Moisture Sensitivity Level |
|
1
|
|
|
|
Compare IXFT22N60P with alternatives
Compare SHD239607 with alternatives