IXFR180N06
vs
IPB80N06S2LH5ATMA1
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
IXYS CORP
|
INFINEON TECHNOLOGIES AG
|
Package Description |
IN-LINE, R-PSIP-T3
|
GREEN, PLASTIC, TO-263, 3 PIN
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
3000 mJ
|
700 mJ
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
55 V
|
Drain Current-Max (ID) |
180 A
|
80 A
|
Drain-source On Resistance-Max |
0.005 Ω
|
0.0062 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
JESD-609 Code |
e1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
720 A
|
320 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Samacsys Manufacturer |
|
Infineon
|
JEDEC-95 Code |
|
TO-263AB
|
|
|
|
Compare IXFR180N06 with alternatives
Compare IPB80N06S2LH5ATMA1 with alternatives