IXFH60N25Q
vs
IPB200N25N3GATMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
IXYS CORP
INFINEON TECHNOLOGIES AG
Part Package Code
TO-247
D2PAK
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1500 mJ
320 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
250 V
Drain Current-Max (ID)
60 A
64 A
Drain-source On Resistance-Max
0.047 Ω
0.02 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
360 W
Pulsed Drain Current-Max (IDM)
240 A
256 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
16 Weeks, 3 Days
Samacsys Manufacturer
Infineon
Moisture Sensitivity Level
1
Transistor Application
SWITCHING
Compare IXFH60N25Q with alternatives
Compare IPB200N25N3GATMA1 with alternatives