IS61WV25616FBLL-10BLI
vs
IS61WV25616EFBLL-10B2LI
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
INTEGRATED SILICON SOLUTION INC
Reach Compliance Code
unknown
compliant
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Factory Lead Time
10 Weeks
Samacsys Manufacturer
Integrated Silicon Solution Inc.
Access Time-Max
10 ns
10 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-PBGA-B48
R-PBGA-B48
Length
8 mm
8 mm
Memory Density
4194304 bit
4194304 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
48
48
Number of Words
262144 words
262144 words
Number of Words Code
256000
256000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
256KX16
256KX16
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Equivalence Code
BGA48,6X8,30
BGA48,6X8,30
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Seated Height-Max
1.2 mm
1.2 mm
Standby Current-Max
0.01 A
0.015 A
Standby Voltage-Min
2 V
2 V
Supply Current-Max
0.025 mA
0.035 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.4 V
2.4 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.75 mm
0.75 mm
Terminal Position
BOTTOM
BOTTOM
Width
6 mm
6 mm
Base Number Matches
1
1
Rohs Code
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IS61WV25616FBLL-10BLI with alternatives
Compare IS61WV25616EFBLL-10B2LI with alternatives