IS61WV25616EFBLL-10B2LI vs IS61WV25616FBLL-10B2I feature comparison

IS61WV25616EFBLL-10B2LI Integrated Silicon Solution Inc

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IS61WV25616FBLL-10B2I Integrated Silicon Solution Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC INTEGRATED SILICON SOLUTION INC
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 10 ns 10 ns
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B48 R-PBGA-B48
Length 8 mm 8 mm
Memory Density 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 48 48
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 256KX16 256KX16
Output Characteristics 3-STATE 3-STATE
Output Enable YES YES
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA48,6X8,30 BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm 1.2 mm
Standby Current-Max 0.015 A 0.01 A
Standby Voltage-Min 2 V 2 V
Supply Current-Max 0.035 mA 0.025 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.4 V 2.4 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 6 mm 6 mm
Base Number Matches 1 1

Compare IS61WV25616EFBLL-10B2LI with alternatives

Compare IS61WV25616FBLL-10B2I with alternatives