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IS45S32400F-6BLA2 vs K4M283233H-HN600 feature comparison

IS45S32400F-6BLA2 Integrated Silicon Solution Inc

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K4M283233H-HN600 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DSBGA BGA
Package Description TFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32
Pin Count 90 90
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Factory Lead Time 10 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz 166 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
Length 13 mm 13 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 105 °C 85 °C
Operating Temperature-Min -40 °C -25 °C
Organization 4MX32 4MX32
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Equivalence Code BGA90,9X15,32 BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Screening Level AEC-Q100
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.002 A 0.0005 A
Supply Current-Max 0.18 mA 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Memory » DRAMs
Memory » DRAMs

Compare IS45S32400F-6BLA2 with alternatives

Compare K4M283233H-HN600 with alternatives