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K4M283233H-HN600 vs HY5V22EMP-6 feature comparison

K4M283233H-HN600 Samsung Semiconductor

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HY5V22EMP-6 SK Hynix Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code BGA BGA
Package Description VFBGA, BGA90,9X15,32 TFBGA,
Pin Count 90 90
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 5.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
Length 13 mm 13 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -25 °C
Organization 4MX32 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096
Seated Height-Max 1 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.0005 A
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 3 V
Supply Voltage-Nom (Vsup) 3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 1
JESD-609 Code e1
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) 20
Memory » DRAMs
Memory » DRAMs

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