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IS42S32800B-6BI vs K4S563233F-FL750 feature comparison

IS42S32800B-6BI Integrated Silicon Solution Inc

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K4S563233F-FL750 Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DSBGA BGA
Package Description 8 X 13 MM, 0.80 MM PITCH, MO-207, BGA-90 TFBGA,
Pin Count 90 90
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.5 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
JESD-609 Code e0
Length 13 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C -25 °C
Organization 8MX32 8MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LFBGA TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.45 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL OTHER
Terminal Finish TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30
Memory » DRAMs
Memory » DRAMs

Compare IS42S32800B-6BI with alternatives

Compare K4S563233F-FL750 with alternatives