IRLML6302TRPBF vs UT6302G-AE2-R feature comparison

IRLML6302TRPBF Infineon Technologies AG

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UT6302G-AE2-R Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code End Of Life Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG UNISONIC TECHNOLOGIES CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 0.78 A 0.78 A
Drain-source On Resistance-Max 0.6 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 28 pF
JEDEC-95 Code TO-236AB TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 0.54 W
Power Dissipation-Max (Abs) 0.54 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1

Compare IRLML6302TRPBF with alternatives

Compare UT6302G-AE2-R with alternatives