IRHN7450SEPBF
vs
IRHN8450PBF
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
CHIP CARRIER, R-CBCC-N3
|
CHIP CARRIER, R-CBCC-N3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
8541.29.00.95
|
Additional Feature |
HIGH RELIABILITY
|
RADIATION HARDENED
|
Avalanche Energy Rating (Eas) |
500 mJ
|
500 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
12 A
|
11 A
|
Drain-source On Resistance-Max |
0.57 Ω
|
0.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-CBCC-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
150 W
|
100 W
|
Pulsed Drain Current-Max (IDM) |
48 A
|
44 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Turn-off Time-Max (toff) |
|
320 ns
|
Turn-on Time-Max (ton) |
|
235 ns
|
|
|
|
Compare IRHN7450SEPBF with alternatives
Compare IRHN8450PBF with alternatives