IRHN8450PBF
vs
IRHN8450
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INFINEON TECHNOLOGIES AG
Package Description
CHIP CARRIER, R-CBCC-N3
CHIP CARRIER, R-CBCC-N3
Pin Count
3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
RADIATION HARDENED
Avalanche Energy Rating (Eas)
500 mJ
500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
11 A
11 A
Drain-source On Resistance-Max
0.5 Ω
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
100 W
Pulsed Drain Current-Max (IDM)
44 A
44 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
320 ns
320 ns
Turn-on Time-Max (ton)
235 ns
235 ns
Base Number Matches
2
2
JESD-609 Code
e0
Operating Temperature-Min
-55 °C
Power Dissipation-Max (Abs)
150 W
Reference Standard
RH - 1000K Rad(Si)
Terminal Finish
TIN LEAD
Compare IRHN8450PBF with alternatives
Compare IRHN8450 with alternatives