IRHN8450PBF vs IRHN8450 feature comparison

IRHN8450PBF International Rectifier

Buy Now Datasheet

IRHN8450 International Rectifier

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INTERNATIONAL RECTIFIER CORP
Package Description CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature RADIATION HARDENED RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 11 A 11 A
Drain-source On Resistance-Max 0.5 Ω 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-CBCC-N3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 100 W 100 W
Pulsed Drain Current-Max (IDM) 44 A 44 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 320 ns 320 ns
Turn-on Time-Max (ton) 235 ns 235 ns
Base Number Matches 2 2
JESD-609 Code e0
Power Dissipation-Max (Abs) 100 W
Terminal Finish TIN LEAD

Compare IRHN8450PBF with alternatives

Compare IRHN8450 with alternatives