IRHM7160 vs JANSH2N7432 feature comparison

IRHM7160 Infineon Technologies AG

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JANSH2N7432 Infineon Technologies AG

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-CSFM-T3 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 3A001.A.1.A
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 35 A 35 A
Drain-source On Resistance-Max 0.045 Ω 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA TO-254AA
JESD-30 Code R-CSFM-T3 S-MSFM-P3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED METAL
Package Shape RECTANGULAR SQUARE
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 250 W 3 W
Pulsed Drain Current-Max (IDM) 201 A 201 A
Qualification Status Not Qualified Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE PIN/PEG
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 1

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Compare JANSH2N7432 with alternatives