IRHM7160
vs
JANSH2N7432
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-CSFM-T3
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
3A001.A.1.A
Additional Feature
RADIATION HARDENED
Avalanche Energy Rating (Eas)
500 mJ
500 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
35 A
35 A
Drain-source On Resistance-Max
0.045 Ω
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-254AA
JESD-30 Code
R-CSFM-T3
S-MSFM-P3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
METAL
Package Shape
RECTANGULAR
SQUARE
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
250 W
3 W
Pulsed Drain Current-Max (IDM)
201 A
201 A
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
PIN/PEG
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Compare IRHM7160 with alternatives
Compare JANSH2N7432 with alternatives