IRHLNM7S7214SCS
vs
IRHLNMC7S7214
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
17.6 mJ
17.6 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
250 V
Drain Current-Max (ID)
3.2 A
3.2 A
Drain-source On Resistance-Max
1.1 Ω
1.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
23.2 W
23.2 W
Pulsed Drain Current-Max (IDM)
12.8 A
12.8 A
Reference Standard
RH - 100K Rad(Si)
RH - 100K Rad(Si)
Surface Mount
YES
YES
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
67 ns
67 ns
Turn-on Time-Max (ton)
52 ns
52 ns
Base Number Matches
1
1
Package Description
CHIP CARRIER, R-CBCC-N3
Compare IRHLNM7S7214SCS with alternatives
Compare IRHLNMC7S7214 with alternatives