IRG4BC40WL
vs
HGTP15N50C1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
HARRIS SEMICONDUCTOR
Package Description
PLASTIC PACKAGE-3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
40 A
15 A
Collector-Emitter Voltage-Max
600 V
500 V
Configuration
SINGLE
SINGLE
JEDEC-95 Code
TO-262
TO-220AB
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
POWER CONTROL
POWER CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
294 ns
Turn-on Time-Nom (ton)
48 ns
Base Number Matches
2
1
HTS Code
8541.29.00.95
Fall Time-Max (tf)
500 ns
Gate-Emitter Thr Voltage-Max
4.5 V
Gate-Emitter Voltage-Max
20 V
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Rise Time-Max (tr)
50 ns
Turn-off Time-Max (toff)
400 ns
Turn-on Time-Max (ton)
50 ns
VCEsat-Max
3.2 V
Compare IRG4BC40WL with alternatives
Compare HGTP15N50C1 with alternatives